GERMANIUM NO FURTHER A MYSTERY

≤ 0.fifteen) is epitaxially grown with a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and afterwards the composition is cycled by oxidizing and annealing levels. As a result of preferential oxidation of Si around Ge [68], the initial Si1–s in biaxially compressive strained QWs from Shubnikov-de Haas or cyclotron resonan